Modeling of ideality factor value in n+--p--p+-Si structure

Study of System Pressure Dependence on n-TiO2/p-Si Hetrostructure for Photovoltaic Applications

This study reports the fabrication of n-TiO2/p-Si hetrojunction by deposition of TiO2nanowires on p-Si substrate. The effect of system pressure and the current-voltage (I-V) characteristics of n-TiO2/p-si hetrojunction were studied. The morphology of the samples was investigated by Field Emission Scanning Electron Microscopy (FESEM) which confirms formation of T...

Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown

p-n diodes with avalanche breakdown Zongyang Hu, Kazuki Nomoto, Bo Song, Mingda Zhu, Meng Qi, Ming Pan, Xiang Gao, Vladimir Protasenko, Debdeep Jena, and Huili Grace Xing School of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853, USA Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA IQE RF LLC, Somerset, New Jersey 088...

Zwitterionic Si-C-Si-P and Si-P-Si-P four-membered rings with two-coordinate phosphorus atoms.

p-Si, and n-Ti02 in Liquid Ammonia

The behavior of several nand p-type semiconductors in liquid ammonia with 0.1 M KI as supporting electrolyte was investigated. The flat-band potentials were estimated from Schottky-Mott plots, and the current-potential curves with several redox couples (e.g., benzophenone, naphthalene, nitrobenzene) in the dark and under illumination were obtained. Photoinjection of solvated electrons at p-GaAs...

Fabrication and characterization of p-Si/n-ZnO heterostructured junctions

In this paper ZnO nanorods and nanodots (with and without a SiO2 buffer layer) were grown on p-Si, forming p–n heterojunctions. The nanorod devices showed no visible electroluminescence (EL) emission but showed rectifying behavior. Covering around 60% of the length of the nanorods with PMMA produced an ideality factor of 3:91 0:11 together with a reverse saturation current of 6:53 4:2 10 8 A. U...